elektronische bauelemente SGM2310A 5 a, 60 v, r ds(on) 115 m n-channel enhancement mode power mosfet 16-dec-2009 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen & lead-free description the SGM2310A utilized advanced processing technique s to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. the SGM2310A is univ ersally used for all commercial-industrial applications. features simple drive requirement super high density cell design for extremely low r ds(on) marking absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 3 i d @ t a = 25c 5.0 a continuous drain current 3 i d @ t a = 70c 4.0 a pulsed drain current 1,2 i dm 10 a power dissipation p d @ t a = 25c 1.5 w linear derating factor 0.01 w / c operating junction & storage temperature t j , t stg -55~150 c thermal data parameter symbol value unit thermal resistance junction-ambient 3 (max). r ja 83.3 c / w sot-89 millimeter millimeter ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 23 10 a = date code 1 g 3 s d 24
elektronische bauelemente SGM2310A 5 a, 60 v, r ds(on) 115 m n-channel enhancement mode power mosfet 16-dec-2009 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min typ max unit test conditions drain-source breakdown voltage bv dss 60 - - v v gs = 0, i d = 250 a gate threshold voltage v gs(th) 0.5 - 1.5 v v ds =v gs , i d =250 a forward transconductance g fs - 12 - s v ds = 15v, i d = 4a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current (t j =25 ) - - 1 v ds = 60 v, v gs = 0 drain-source leakage current (t j =70 ) i dss - - 10 a v ds = 60 v, v gs = 0 - - 115 v gs =10v, i d =5.0a static drain-source on-resistance r ds(on) - - 125 m v gs =4.5v, i d =4.5a total gate charge 2 q g - 4.0 - gate-source charge q gs - 1.2 - gate-drain (miller) charge q gd - 1.0 - nc i d = 4 a v ds = 30 v v gs =4.5 v turn-on delay time 2 t d(on) - 6 - rise time t r - 12 - turn-off delay time t d(off) - 18 - fall time t f - 10 - ns v dd = 30 v i d =2.5 a v gs =10 v r g = 6 , r l = 12 input capacitance c iss - 320 - output capacitance c oss - 42 - reverse transfer capacitance c rss - 20 - pf v gs = 0 v v ds = 30 v f = 1.0 mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =2.5a, v gs =0v notes: 1. pulse width limited by max. junction temp erature. 2. pulse width Q 300 s, duty cycle Q 2%. 3. surface mounted on fr4 board, t Q 10sec.
elektronische bauelemente SGM2310A 5 a, 60 v, r ds(on) 115 m n-channel enhancement mode power mosfet 16-dec-2009 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SGM2310A 5 a, 60 v, r ds(on) 115 m n-channel enhancement mode power mosfet 16-dec-2009 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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